CVD SiC & TaC Coatings | Particle-Free High-Purity for MOCVD & Epitaxy | SemiXLab Manufacturer in China – Semixlab

CVD Coating

CVD Coating Solutions – High-Purity SiC, TaC & PYC Coatings for Semiconductor Thermal Fields

Core Introduction

SemiXLab specializes in advanced chemical vapor deposition (CVD) coatings engineered for the most demanding semiconductor processes. Our CVD-SiC (silicon carbide), CVD-TaC (tantalum carbide), and PYC / PG (pyrolytic carbon / pyrolytic graphite) coatings deliver excellent film uniformity, interfacial adhesion strength, and ultra-high-purity dense structures.

These coatings protect graphite substrates used in wafer epitaxy and high-temperature corrosive environments, significantly extending component life while minimizing particle generation. Through proprietary process control and independent CVD equipment development, we achieve stable coating thickness, excellent crystal orientation uniformity, and outstanding resistance to hydrogen, ammonia, and halogen process gases.

Key advantages include high-temperature corrosion resistance, particle-free surfaces (reducing wafer contamination risk), and CTE-matched design with the substrate to ensure dimensional stability during thermal cycling. Our coatings are widely applied to MOCVD susceptors, epitaxial wafer carriers, LED / SiC / GaN film deposition platforms, and other critical thermal-field components.

Dense CVD silicon carbide coating cross-section on high-purity graphite substrate

Key Specifications

Parameter	CVD SiC	CVD TaC	PG / PyC	Glass Carbon
Density	3.21 g/cm³	14.3 g/cm³	~2.25 g/cm³	1.42–1.54 g/cm³
Hardness	2500 HV	2000 HK	1.2 GPa	230–340 HV
Purity	99.99995%	High purity	≤5 ppm	High purity (low ash)
Thermal Cond.	300 W·m⁻¹·K⁻¹	9–22 W/(m·K)	—	4.6–6.3 W/(m·K)
CTE	4.5×10⁻⁶ /K	6.3×10⁻⁶ /K	—	2.6–3.5×10⁻⁶ /K
Max Temp.	~2100°C (subl. 2700°C)	<2500°C	High	Inert 2800–3000°C; air ~600°C
Typical Thickness	Customizable	35±10 μm (≥20 μm)	30–100 μm	50–100 μm
Key Advantages	High thermal conductivity, mature process, cost-effective	Ultra-high density, extreme temp, chemical stability	High purity, orientable, low hardness	Gas-tight, strong corrosion resistance, low particles
Applications	SiC/GaN epi, MOCVD, RTP, diffusion, high-temp heaters	SiC PVT crystal growth, ultra-high-temp epi rings, thermal fields	Thermal-field assist, insulation, high-purity surfaces	Etch/plasma, strong corrosion, ultra-high-purity carriers