CVD TaC Coated Susceptor

Product Overview

Semixlab CVD TaC Coated Susceptors are engineered for the most demanding epitaxial growth environments. By applying a dense, ultra-high-purity tantalum carbide (TaC) coating onto precision-machined high-purity graphite, we create a chemically inert barrier that withstands temperatures above 2200 °C while virtually eliminating carbon contamination and particle generation.

These susceptors are the preferred choice for silicon carbide (SiC) physical vapor transport (PVT) crystal growth and for GaN / SiC MOCVD epitaxy, where process purity and thermal uniformity directly determine device yield.

Key Advantages

• Extreme temperature capability — stable operation above 2200 °C (TaC melting point ~3880 °C)

• Superior chemical inertness against H₂, NH₃, silane and halogen process gases

• Ultra-low particle generation and carbon contamination risk

• Excellent coating adhesion and thermal-shock resistance for long service life

• Customizable pocket design, flatness and surface roughness for optimal wafer contact

• Compatible with major SiC epitaxy and MOCVD reactor platforms

Why Choose Semixlab?

We control the entire process chain — from high-purity graphite selection and precision machining to proprietary CVD TaC deposition and final inspection. Every susceptor is delivered with consistent coating thickness, high crystallinity and verified purity, helping you reduce particle-related yield loss and extend mean time between maintenance.

Custom geometries, coating thickness and surface finishes are available to match your specific reactor design.

Typical Applications

• SiC PVT crystal growth crucibles and susceptors

• GaN and SiC MOCVD epitaxial susceptors and wafer carriers

• High-temperature thermal-field components in power semiconductor manufacturing

• LED and RF device epitaxy platforms