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CVD SiC Coated Graphite Susceptor Manufacturer for MOCVD and Epitaxy
Semixlab offers CVD SiC coated graphite susceptors for high-temperature semiconductor work – MOCVD, epitaxy, and wafer processing all fall within their use case. Each susceptor starts with a high-purity graphite base, then gets a uniform layer of silicon carbide applied via chemical vapour deposition. The graphite gives you good thermal response, while the SiC adds chemical inertness and surface hardness.
Description
Product Overview
In epitaxial growth, the susceptor has a direct influence on how uniformly wafers heat up and how consistent the growth environment stays across a run. Semixlab's CVD SiC coated susceptors are made from dense graphite and coated with our SiC process. What do they bring?
● Decent thermal conduction
● Even temperature profiles across the wafer
● Solid resistance to process chemicals
● Low particle shedding
● Extended part life in hot zones
The CVD coating forms a dense SiC skin that protects the graphite from aggressive gases and boosts the component's overall robustness.
Key Features
High Purity Graphite Substrate
We use graphite grades that give you:
● Low impurity counts
● Predictable mechanical response
● Sufficient thermal conduction
● Good tolerance to thermal shock
This graphite holds up well during fast heat-up and cool-down cycles.
Uniform CVD SiC Coating
The SiC layer provides:
● High surface hardness
● Decent oxidation protection
● Improved corrosion resistance
● Less risk of contamination
Coating thickness and surface finish can be varied to suit your particular process.
Excellent Thermal Uniformity
Getting a stable thermal field is non-negotiable for epitaxy. The pairing of graphite's conduction and SiC's surface properties helps deliver:
● Uniform wafer temperatures
● More stable processing
● Better repeatability from run to run
High Temperature Stability
These susceptors are built to handle tough semiconductor conditions:
● High operating temperatures
● Frequent thermal cycling
● Sustained process stability over long periods
Why Choose Semixlab?
Advanced CVD Coating Technology
We have hands-on experience with carbon-based materials and CVD coating, and we can tailor SiC coated graphite components to your specific semiconductor application.
Customised Manufacturing Capability
We handle:
● Prototypes
● Small runs
● Volume production
● Custom sizes and designs
Quality Control
Every part gets checked for:
● Dimensional precision
● Surface condition
● Coating uniformity
● Process dependability
Specifications
| Item | Specification |
| Product | CVD SiC Coated Graphite Susceptor |
| Base Material | High Purity Graphite |
| Coating Material | CVD Silicon Carbide (SiC) |
| SiC Purity | ≥99.999% (Typical) |
| Operating Temperature | Up to 1600°C (process dependent) |
| Coating Thickness | Customizable |
| Surface Finish | Customised per application |
| Diameter | Customised |
| Application | MOCVD, Epitaxy, Semiconductor Processing |
Applications
| Equipment Type | Typical Processes | Wafer Materials |
| MOCVD Reactors | GaN LED epitaxy, compound semiconductor growth, thin-film deposition | GaN, InGaN, AlGaN |
| Epitaxy Systems | SiC epitaxial growth, III-V semiconductor epitaxy | SiC, GaAs, InP |
| Wafer Processing Tools | High-temperature support, R&D test runs | Silicon, SiC, GaN |
Our Services
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