Materials Selection & Customized Engineering Design – Application‑Driven Matching of Materials, Coatings & Feedstock

We do not offer one‑size‑fits‑all standard products. Instead, we match solutions to the customer's process window. Two main lines are covered: Thermal‑field structural components and PVT crystal‑growth feedstock. SemiXLab independently develops CVD equipment and process recipes; graphite is sourced from leading suppliers (SGL / Toyo Tanso / Mersen, etc.); CNC precision reaches 3 μm; coating and feedstock purity targets metallic impurities<5 ppm (Source can be verified at 7N level)—design conclusions feed directly into Zhuji production‑line process packages.

Process Consultation

Two Main Solution Lines

① Thermal‑field structural components: high‑purity graphite + CVD SiC / CVD TaC — anti‑delamination, low particle generation, reduced CoO.
② PVT crystal‑growth feedstock: CVD SiC Source high‑purity bulk material, replacing conventional SiC powder — reduces carbon dust, stabilizes sublimation, serves SiC single‑crystal growth.

Coating Selection Quick Reference (Thermal‑Field Structural Parts)

Comparison Item	CVD SiC Coating (Flagship)	CVD TaC Coating (Flagship)
Typical Conditions	<1400°C · Epitaxy / MOCVD / Etch	1500–2200°C · PVT / Ultra‑high‑T thermal fields
Core Advantages	High hardness, oxidation resistance, HCl/NH₃ resistance	Ultra‑high‑T stability; resistance to atomic H and metal vapors
Typical Applications	Susceptor, carrier plate, heater components	Crucible, gas guide, ultra‑high‑T pedestal
Design Focus	CTE matching + film‑thickness uniformity	CTE matching + phase purity / zero pinholes

CVD SiC Source Selection Quick Reference (PVT Feedstock · Third Flagship)

Comparison Item	Conventional SiC Powder	CVD SiC Source (Flagship)
Form	Fine powder / irregular small particles	High‑purity bulk / block (size controllable)
Purity & Impurities	Typically 5N–6N; prone to inclusions	Target 7N level; extremely low metallic impurities, low nitrogen
C‑Dust Risk	Higher; easily introduces defects	Significantly reduced; favors interfacial stability
Sublimation & Growth Performance	Prone to crusting; rate fluctuation	More stable sublimation; favors higher growth rate and crystal quality
Typical Use	Traditional PVT charge	6–8 inch SiC single‑crystal PVT feedstock upgrade

During design we align with the customer on: target polytype and size, charge density, growth‑temperature window, and acceptable metallic/nitrogen impurity limits—then lock block specifications and batch inspection items.

Four Design Principles

CTE stress matching

Match graphite and coating to the temperature profile to withstand thermal shock >100°C/min.

Application‑specific coating/feedstock selection

SiC coating for mid‑to‑high‑T epitaxy and etch; TaC for extreme high temperatures; Source for PVT charge and crystal quality.

Controllable electro‑thermal and sublimation behavior

Resistivity/thermal conductivity fine‑tuned to heater‑zone needs; Source locks sublimation window via block specs and purity.

Contamination‑source sealing

High‑purity CVD layer seals porous graphite; Source at 7N purity and low nitrogen reduces crystal‑defect sources.

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Materials & Design

Materials Selection & Customized Engineering Design – Application‑Driven Matching of Materials, Coatings & Feedstock

Two Main Solution Lines

Coating Selection Quick Reference (Thermal‑Field Structural Parts)

CVD SiC Source Selection Quick Reference (PVT Feedstock · Third Flagship)

Four Design Principles

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