Porous graphite is mainly used in PVT (physical vapor transfer) silicon

carbide (SiC) single crystal growth process, is the core material of high

temperature thermal field system. The product is made of ultra-high purity

isostatically pressed graphite, which forms a uniform and controllable porous

structure through precision CNC machining and pore control technology, ensuring

excellent performance under extreme process conditions (2200℃). Its unique

design significantly improves thermal field uniformity and optimizes gas phase

transfer efficiency, which is a key guarantee for high-quality SiC crystal

growth.

Core features and process advantages:

Extreme purity and low defect rate

The vacuum high-temperature purification process (3000℃ treatment) is used to

further reduce the content of non-metallic impurities such as oxygen and

nitrogen. Eliminate impurity induced crystal defects (such as microtubules,

dislocations) to ensure the electrical performance consistency of SiC single

crystals.

Ultra high temperature stability and thermal field control

In argon/vacuum environment, it can withstand 2200℃ continuous operation for

more than 1000 hours, low coefficient of thermal expansion, and avoid material

cracking caused by thermal stress.

The porosity supports gradient distribution design, combined with CFD

simulation to optimize the pore size (10-200μm), accurately regulate the thermal

field distribution, reduce the temperature gradient fluctuation (within ±3℃),

and improve the crystal growth uniformity.

Customized solutions

Geometric adaptation: Support complex shape processing (such as annular

crucible, multi-layer shield), matching customer furnace structure.

Surface treatment: Provide ultra-precision polishing or coating services to

enhance corrosion resistance and service life.

Application performance verification

In the PVT SiC crystallization process, as a crucible and thermal field

component:

Increase crystal growth rate by 15%-20% (compared with traditional

graphite);

Wafer yield increased to more than 90% (4 inch SiC single crystal);

The maintenance period of the equipment is extended to 6 months (the usual 3

months).

Quick Detail:

1. Other names: PVT graphite crucible, silicon carbide growth with porous

graphite.

2. Application: PVT method (physical gas transport method) SiC single crystal

growth core thermal field component.

3. Core parameters: purity ≥99.9995%, porosity 15-30%, temperature resistance

2200℃ (inert gas environment), thermal conductivity 100-150 W/m·K.

Typical physical properties of porous graphite
ltem	Parameter
Bulk density	0.89 g/cm2
Compressive strength	8.27 MPa
Bending strength	8.27 MPa
Tensile strength	1.72 MPa
Specific resistance	130Ω -inx10-5
Porosity	50%
Average pore size	70um
Thermal Conductivity	12W/M*K

PVT growth furnace assembly: As part of SiC material sublimation and crystal growth, provides a stable thermal field distribution.

Thermal field shielding component: porous structure effectively reduces thermal stress and prolongs the service life of the equipment.

Seed crystal bracket: high mechanical strength to support the seed crystal, to ensure the directional growth of the crystal.

Gas diffusion layer: optimize gas phase transfer efficiency, improve single crystal quality and growth rate.

Ultra-high temperature performance: no softening deformation at 2200℃, supporting more than 1000 hours of continuous stable operation.

Custom thermal field design: Combined with CFD simulation to optimize pore gradient, improve crystal uniformity and yield.

Fast iteration service: provide process parameter matching test and deliver prototype solution within 72 hours.