Quartz Glass Tube for Tube Furnace

High-Purity Quartz Glass Tube for Tube Furnace (Custom Fused Quartz Tube)

Brand: Semixlab

Category: Semiconductor Furnace Components / High-Purity Quartzware Tube, Semiconductor Quartz Furnace Tube

Product Names / Synonyms: Quartz Glass Tube for Tube Furnace, Quartz Tubes, Fused Quartz

Material Grade: High-Purity Natural Fused Quartz / Synthetic Fused Silica (5N-6N)

and Custom OEMs)

Compatibility: Horizontal & Vertical Batch Furnaces (TEL, ASM, Kokusai, Bruce Technologies,

Diameter Range: Custom Outer Diameters (OD) up to 500 mm, Lengths up to 3000 mm

Product Key Features

Fabricated from ultra-pure natural quartz or synthetic silica, Semixlab's Fused Quartz Tube products feature sub-ppm metallic purity, extremely low outgassing, and smooth, defect-freefire-polished surfaces that inhibit particle generation and delay thermal devitrification.

Key Superior Features:

Ultra-High Chemical Purity (5N to 6N): Total metallic trace contamination (Fe, Cu, Na, K,Li, Al) is strictly kept under 10 ppm (or sub-ppm for synthetic grades) to protect wafer gate oxides from mobile ion contamination.

Superior Thermal Shock & Deformation Resistance: Exceptionally low thermal expansion coefficient (≈ 5.5 X 10-7/K) allows rapid temperature ramping up to 1150°C without thermal fracture.

Precision Wall Thickness Uniformity: Tight dimensional tolerances (I0.3 mm wall thickness variance) guarantee even heat distribution across all heating zones and prevent high-temperature sagging.

Controlled Hydroxyl (OH ) Levels: Standard and low-OH content variants available to optimize high-temperature mechanical strength and resist sagging during long oxidation or diffusion runs.

Applications in Semiconductor Processing

Semixlab high-purity Quartz Tubes function as critical process chambers across essential thermal processing equipment:

A. Thermal Oxidation (Dry & Wet Oxide Growth)

Application: Forms the process chamber for dry O2 or pyrogenic wet H2/O2 oxidation routines operating between 900°C and 1100°C.

B. Dopant Diffusion & Drive-In Annealing

Application: Encloses batch wafers during solid/gaseous dopant introduction(Phosphorus POCl3, Boron BBr3) and high-temperature lattice annealing.

C. Low-Pressure Chemical Vapor Deposition (LPCVD)

Application: Serves as the vacuum reaction chamber for LPCVD deposition of Poly-Silicon (Poly-Si), Silicon Nitride (Si3N4), and High-Temperature Oxide (HTO).