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Quartz Furnace Tube
The Semixlab High-Purity Quartz Furnace Tube is a premium process chamber component designed for batch horizontal and vertical thermal furnaces in semiconductor manufacturing (150mm, 200mm, and 300mm wafers). Engineered from top-grade fused silica with ultra-low trace metal impurities (sub-ppm to ppb levels), it provides an exceptionally clean, contamination-free micro-environment for Thermal Oxidation, Diffusion, LPCVD, and Annealing.
Description
Product Overview
In Front-End of Line (FEOL) thermal processing—including oxidation, diffusion, LPCVD, and annealing—the process chamber must withstand temperatures reaching up to 1150° C while maintaining an environment completely free of metallic contamination.
Semixlab High-Purity Quartz Furnace Tubes serve as the vital reaction chamber for batch vertical and horizontal furnaces. Fabricated from ultra-pure fused silica (synthetic or natural quartz) with metallic impurity levels controlled to ppm and ppb levels, our furnace tubes provide a pristine micro-environment. Combined with custom dimensional tolerances, high resistance to thermal shock, and smooth interior surface finishing, Semixlab quartzware protects sensitive silicon substrates from lattice defects, gate-oxide breakdown, and yield-killing particle contamination.
Key Advantages & Features
1. Ultra-High Material Purity (Sub-ppm Trace Metals)
Semixlab quartz tubes are manufactured using top-tier fused silica raw materials. Alkali metals (Na, K, Li) and heavy metals(Fe, Cu, Ni) are strictly suppressed to sub-ppm and ppb levels. This eliminates outgassing and thermal diffusion of metallic impurities into the wafer substrate during long-term high-temperature soaks, preserving gate oxide integrity (GOI).
2. Superior Thermal Shock Resistance & Low Thermal Expansion
Featuring an extremely low Coefficient of Thermal Expansion(CTE ≈ 5.5 X 10-7/K), our quartz furnace tubes withstand rapid thermal ramp rates and severe temperature gradients without cracking, warping, or suffering structural fatigue.
3. Precision Geometries & Custom Micro-Machining
Leveraging advanced thermal welding and CNC glass-working capabilities, Semixlab provides quartz tubes with tight wall-thickness uniformity, precise flange flatness, integrated gas inlets/outlets, and complex internal baffle assemblies to ensure uniform process gas laminar flow across all wafers.
4. Optimized Anti-Devitrification Performance
Through proprietary surface treatment and hydroxyl (OH) content control, Semixlab quartz tubes exhibit increased resistance to devitrification (cristobalite phase transformation) at elevated temperatures (> 1000° C), significantly extending service life in diffusion and LPCVD tools.
Why Choose Semixlab?
1. End-to-End Precision Glass-Working Capabilities
Semixlab operates fully equipped manufacturing centers capable of high-precision CNC grinding, automated glass lathe turning, robotic flame polishing, and cleanroom annealing. We handle everything from raw ingot reshaping to complex internal gas manifold integration.
2. Strict Quality Control & Cleanroom Packaging
Every tube undergoes dimensional CMM verification, polariscopic thermal stress inspection, and strict trace-metal contamination testing. Products are cleaned via multi-stage ultra-pure water (UPW) chemical etching in Class 10/100 cleanrooms and double vacuum-sealed for immediate installation.
3. Fast Prototype & Second-Source Customization
Whether you require standard replacement quartzware for legacy platforms or custom co-design for next-generation vertical furnaces, Semixlab provides rapid 3D CAD modeling, thermal stress analysis, and quick turnaround times for evaluation prototypes.
Specifications
Below are standard specifications for Semixlab Quartz Furnace Tubes. We offer fully customized dimensions, flange configurations, and gas routing to meet specific OEM equipment standards (e.g., TEL, KOKUSAI, ASM, Thermco).
| Parameter | Specification / Value | Standard / Remarks |
| Material Grade | High-Purity Fused Quartz / Synthetic Quartz | Pure SiO2 ≥99.999% |
| Total Impurity Level | <10 ppm (Standard) / <1 ppm (Ultra-Pure) | ICP-MS tested (Fe, Cu, Na, K) |
| Hydroxyl (OH−) Content | <3 ppm to 30 ppm (Selectable) | Tailored for high-temp vs. optical needs |
| Density | 2.20 g/cm3 | Bulk density |
| Max Working Temp | 1150∘C (Continuous) / 1250∘C (Short-term) | Vacuum or inert gas protection |
| Coefficient of Thermal Expansion | 5.5×10−7/K (20∘C∼1000∘C) | Extremely high thermal stability |
| Thermal Conductivity | 1.4 W/m⋅K (at 20∘C) | Uniform thermal gradient |
| Surface Finish | Fire-polished / Acid-etched / Ground finish | Ra≤0.1 μm on interior surfaces |
| Wall Thickness Tolerance | ±0.2 mm to ±0.5 mm | Precision CNC hot-working |
| Compatible Wafer Sizes | 150mm (6"), 200mm (8"), 300mm (12") | Horizontal & Vertical Furnace geometries |
Applications
Target Application Scenarios
Semixlab Quartz Furnace Tubes are field-proven across major batch thermal processes in silicon and compound semiconductor (SiC / GaN) fabs:
Thermal Oxidation (Dry / Wet Oxidation): Creates high-integrity SiO2 gate oxides, sacrificial oxides, and pad oxides under O2, H2O, and trans-LC/HCI chemistries.
Diffusion & Dopant Drive-In: Provides a pristine environment for gaseous/liquid dopant diffusion (e.g., POCl3 phosphorus diffusion, BBr3 boron diffusion) and post-implantation thermal annealing.
Low-Pressure Chemical Vapor Deposition (LPCVD): Withstands low vacuum pressures (0.1 ~ 1 Torr) and corrosive precursor environments for depositing Polysilicon, Silicon Nitride (Si3N4), and Silicon Dioxide (TEOS / LTO / HTO).
Annealing & Alloying: Ideal for high-temperature defect repair, stress relief, and Ohmic contact forming gas(N2/H2) anneals.
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