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Fused Silica Wafer Boat
Ultra-high purity Fused Silica Wafer Boats & Quartz Boat Brackets for semiconductor thermal processing (Oxidation, Diffusion, LPCVD).Certified 99.999% Si02, tight 10.05 mm slot tolerance. Contact Semixlab for custom CAD drawings & rapid quotes!
Description
Key Superior Features
Ultra-High Chemical Purity (5N to 6N): Trace metallic contamination (Fe, Cu, Na, K)controlled below sub-ppm thresholds to prevent auto-doping and gate oxide degradation.
Thermal Shock Resistance: Near-zero thermal expansion coefficient (≈ 5.5 X 10-7/K)eliminates structural deformation during rapid furnace ramp-up and cool-down cycles.
Precision CNC Machining: Micro-slotted wafer grooves engineered with tolerances down to +0.05 mm to ensure zero wafer rattling, minimize particle generation, and enable seamless robotic End-Effector loading.
Superior Surface Polish: Flame-polished and acid-etched surfaces minimize micro-cracks, delaying devitrification and extending operational service life.
Specifications
Technical Specifications & Physical Parameters
All parameters are tested and certified in compliance with international semiconductor material standards (ASTM, ISO, and SEMI guidelines).
| Parameter Category | Physical / Chemical Metric | Value / Standard Range |
| Chemical Composition | SiO2Purity | ≥99.999% (5N) / ≥99.9999% (6N) |
| Trace Metal Impurities (Fe, Na, K, Cu, Al) | <10 ppm total (<0.1 ppm for synthetic grades) | |
| Hydroxyl (OH−) Content | Standard: 10−30 ppm; Low-OH: <5 ppm | |
| Thermal Properties | Coefficient of Thermal Expansion (CTE) | 5.5×10−7/K (20∘C−320∘C) |
| Max Continuous Operating Temp | 1150∘C | |
| Softening Point | 1680∘C−1710∘C | |
| Annealing Point | 1180∘C−1210∘C | |
| Physical & Mechanical | Density | 2.20 g/cm3 |
| Flexural Strength (Modulus of Rupture) | 50−70 MPa (20∘C) | |
| Young's Modulus | 72 GPa | |
| Outgassing Rate | <1×10−9 Torr⋅L/s⋅cm2 |
Applications
Semiconductor Process Applications
Semixlab Fused Quartz Boat products are optimized for critical high-temperature and vacuum tube furnace applications:
A. Thermal Oxidation (Dry & Wet)
Function: Holds batch wafers inside horizontal/vertical furnace tubes at temperatures ranging from 900° C to 1100° C.
Process Advantage: Ultra-low sodium (Na) and alkali content prevents mobile charge
contamination in high-performance gate dielectric oxides.
B. Dopant Diffusion & Thermal Annealing
Function: Supports batch processing during Phosphorus (POCl3), Boron (BBr3) drive-in, and rapid thermal annealing (RTA) pre-treatments.
Process Advantage: High structural stability prevents sag or tilt under continuous high-temperature exposure, ensuring uniform gas flow between wafer slots.
C. Low-Pressure Chemical Vapor Deposition (LPCVD)
Function: Serves as the primary wafer carrier during LPCVD deposition of Poly-Silicon (Poly-Si), Silicon Nitride (Si3N4), and High-Temperature Oxide (HTO).
Process Advantage: Highly resistant to chemical erosion during post-deposition off-line
cleaning (acid baths).
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