EN 
EN
DA
NL
FI
FR
DE
IT
JA
KO
NO
PL
PT
RO
RU
ES
SV
TL
ID
SK
UK
VI
TH
TR
FA
BE
LA
UZ
Graphite element
Semixlab Graphite Components are mission-critical thermal field parts used in semiconductor single-crystal growth (CZ/SiC) and epitaxial deposition processes (MOCVD, SiC Epi, Silicon Epitaxy). Engineered with ultra-high purity (<5 ppm ash), sub-micron machining precision, and optional CVD SiC or TaC coatings, they deliver stable mechanical support, uniform heat distribution, and reliable chemical isolation under extreme thermal shock, high vacuum, and aggressive process environments. Available as drop-in replacements or complete thermal field assemblies for leading platforms.
Description
Product Overview
In semiconductor single-crystal growth (CZ/SiC) and epitaxial deposition processes (MOCVD, SiC Epi, Silicon Epitaxy), thermal management components operate under extreme conditions: intense thermal shock, high vacuum, and aggressive chemical environments.
Semixlab manufactures semiconductor-grade Graphite Components engineered to meet the stringent demands of advanced wafer processing. Developed under the technical leadership of former Chinese Academy of Sciences (CAS) experts and backed by Yongjiang Laboratory (Y-LAB) research, our graphite products combine sub-micron machining precision with ultra-high purity control. Available as stand-alone replacements or complete thermal field assemblies, Semixlab Graphite Components serve as mission-critical hardware for leading global reactor platforms.
Core Advantages & Key Features
Ultra-High Purity Control (<5 ppm Total Ash)
Impurities in thermal field materials can cause severe wafer contamination during high-temperature runs. Through vacuum purification, our graphite components maintain total metallic impurities under <5 ppm. GDMS full-element analysis is available upon request.
Micron-Level Machining Precision (±0.001 mm)
Utilizing multi-axis CNC machine centers, we produce complex geometries—including multi-pocket susceptors, precision slots, and thin-wall thermal shields—with tolerances down to sub-micron levels, ensuring dimensional stability across high-cycle thermal runs.
Advanced CVD SiC / TaC Surface Coatings
To eliminate graphite dust generation, outgassing, and chemical degradation, Semixlab applies proprietary Chemical Vapor Deposition (CVD) coatings. Options include CVD Silicon Carbide (SiC) coating for standard epitaxy and CVD Tantalum Carbide (TaC) coating for extreme thermal stability above 2000°C.
Tailored Coefficient of Thermal Expansion (CTE)
By matching substrate graphite CTE with our CVD SiC and TaC coatings, Semixlab components resist delamination, cracking, and thermal shock during rapid ramp-up and cool-down cycles.
Seamless Drop-In Tool Compatibility
We maintain a comprehensive blueprint database for global OEM platforms (such as Aixtron, Veeco, AMEC, LPE, ASM, and AMAT), enabling smooth drop-in replacement without altering reactor thermal dynamics.
Product Portfolio & Specifications
1. Crystal Growth Graphite Components
Designed for CZ silicon monocrystalline pullers, SiC sublimation furnaces, and compound semiconductor growth setups:
• Graphite Heaters: Optimized electrical resistivity and uniform power distribution.
• Graphite Crucibles & Chucks: Multi-piece (e.g., three-petal) structural stability under heavy loads.
• Deflector Tubes & Heat Shields: Precise thermal field containment to reduce parasitic deposition.
2. Semiconductor Epitaxy Graphite Components
Designed for MOCVD, Si/SiC epitaxy reactors, and CVD gas distribution systems:
• Epitaxial Susceptors & Trays: Multi-pocket, single-wafer, or barrel configurations (4" to 12" wafer sizes) with high coating uniformity.
• Preheating Rings & Gas Guide Rings: Enhanced temperature uniformity across wafer edges.
Technical Property Comparison
| Material / Property Parameter | High-Purity Graphite (Substrate) | CVD SiC Coated Graphite | CVD TaC Coated Graphite |
| Bulk Density | 1.75 – 1.85 g/cm³ | Coating layer: ~3.21 g/cm³ | Coating layer: ~14.3 g/cm³ |
| Total Purity (Ash Content) | <5 ppm | Semiconductor Grade (>99.99995%) | High purity (typically <5 ppm total impurities) |
| Max Working Temperature | ≤3000 °C (Inert / Vacuum) | ~1600–2100 °C (practical use) | <2500 °C (practical use) |
| Thermal Conductivity | 90 – 130 W/(m·K) | Coating: ~300 W/(m·K) | Coating: 9 – 22 W/(m·K) |
| Main Applications | Crystal Pulling Thermal Fields | Si/GaN Epitaxy Susceptors | SiC Epitaxy, SiC Crystal Growth |
Target Application Scenarios
• MOCVD GaN / LED Epitaxy: Susceptors and guide rings for GaN-on-Si and GaN-on-Sapphire wafer growth.
• SiC Power Device Epitaxy: High-temperature TaC and SiC-coated graphite components for 1500°C+ environments.
• Silicon Wafer Processing: LPCVD, oxidation, diffusion, and RTP thermal field accessories.
• Photovoltaic & Semi Crystal Growth: High-purity graphite heaters, crucibles, and structural fixtures.
Why Choose Semixlab Technology?
1. CAS Academic Heritage: Led by former CAS scientists, our proprietary R&D ensures complete scientific compliance and continuous material innovation.
2. In-House CVD Production Lines: Operating 12+ automated CVD production lines with complete vertical integration from graphite machining to purification and coating.
3. Certified Quality Assurance: Full ISO 9001:2015 certification backed by ICP-OES and GDMS testing for total traceability.
