The SiC (Silicon Carbide) coated graphite susceptor is an essential component

for semiconductor manufacturing, particularly in demanding high-temperature

applications like epitaxial deposition and MOCVD (Metal-Organic Chemical Vapor

Deposition).

These susceptors are engineered to hold and heat silicon wafers with

exceptional precision, ensuring uniform temperature distribution and a pristine

process environment. Our susceptors are crucial for producing high-quality,

uniform thin films that are the foundation of reliable and high-performance

semiconductor devices.

Ⅰ. Core Materials and Key Properties

Our susceptors are expertly constructed using a high purity graphite core and

a protective layer of Silicon Carbide (SiC).

High-Purity Graphite: The graphite substrate provides the core structural

integrity and thermal performance. Its excellent thermal stability allows it to

operate at extremely high temperatures without deformation. The low thermal mass

of graphite enables rapid and efficient heating and cooling, which is vital for

quick cycle times in a production environment.

Silicon Carbide (SiC) Coating: The SiC coating is applied to the graphite

through a  CVD (Chemical Vapor Deposition)  process. This creates a dense,

non-porous surface that is extremely hard and chemically inert. SiC provides

superior resistance to plasma erosion and attack from aggressive process gases,

preventing contamination and particle generation. This ensures a clean process,

extends the component’s life, and protects the underlying graphite from

damage.

Ⅱ. Functional Benefits in Wafer Fabrication

Our SiC coated graphite susceptors play a critical role in ensuring the

quality and efficiency of semiconductor fabrication.

● Unmatched Thermal Uniformity: The susceptor’s design, combined with the

thermal properties of SiC and graphite, ensures that heat is distributed evenly

across the entire wafer surface. This is vital for achieving uniform film

thickness and consistent material properties, which are key to high device

yield.

● Superior Contamination Control: The non-porous and chemically inert SiC

coating prevents outgassing and particle shedding from the graphite substrate.

This drastically reduces the risk of wafer contamination and defects, which is a

common challenge in high-temperature processes.

● Enhanced Durability and Lifespan: The robust SiC coating acts as a

protective shield against abrasive and corrosive elements, significantly

extending the susceptor’s operational lifespan. This reduces the frequency of

replacement and lowers overall maintenance costs.

● High Process Repeatability: By providing a stable and consistent thermal

and chemical environment, our susceptors allow for highly repeatable processes.

This consistency is fundamental for large-scale production of reliable

semiconductor devices.

At Semixlab, we are committed to providing the semiconductor industry with

premium components and unparalleled Customization service. We offer

comprehensive custom design and manufacturing for our SiC coated graphite

susceptors. Our engineering team can collaborate with you to create a susceptor

that perfectly matches your equipment specifications and unique process

requirements.

Basic physical properties of CVD SiC coating
Property	Typical Value
Crystal Structure	FCC β phase polycrystalline, mainly (111) oriented
Density	3.21 g/cm³
Hardness	2500 Vickers hardness(500g load)
Grain Size	2~10μm
Chemical Purity	99.99995%
Heat Capacity	640 J·kg-1·K-1
Sublimation Temperature	2700℃
Flexural Strength	415 MPa RT 4-point
Young’ s Modulus	430 Gpa 4pt bend, 1300℃
Thermal Conductivity	300W·m-1·K-1
Thermal Expansion(CTE)	4.5×10-6K-1